Open-air silicon etching by H2-He-CH4 flowing cold plasma

Materials Letters

Volumn 57, Issue 22-23, 2003, Pages 3406-3411

  Chaudhary, Khaliq ^a,b   Inomata, Kiyoto ^a   Yoshimoto, Mamoru ^a   Koinuma, Hideomi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b THE ISLAMIA UNIVERSITY OF BAHAWALPUR   (Pakistan)

Author keywords

Etching; Hydrogen; Plasma; Silicon

Indexed keywords

CARBON; CATHODES; DEPOSITION; DIAMOND FILMS; EMISSION SPECTROSCOPY; HELIUM; HIGH PRESSURE EFFECTS; HYDROGEN; METHANE; MIXTURES; PARTICLE BEAMS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS; SUBSTRATES; TUNGSTEN;

OPTICAL EMISSION SPECTROSOPY (OES);

PLASMA ETCHING;

EID: 0038480695     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-577X(03)00085-5     Document Type: Article

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