Effect of Al pre-deposition layer on the epitaxial growth of silicon on Al2O3/Si (111) substrates

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 134-137

  Ishida, Makoto ^a   Jung, Young Chul ^a   Miura, Hiroyuki ^a   Koji, Yoshiaki ^a   Sawada, Kazuaki ^a   Yoshimoto, Mamoru ^b   Keisuke, Mizuno ^b   Takahumi, Miyahara ^b   Hideaki, Maruta ^b  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; MORPHOLOGY; RAPID THERMAL ANNEALING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SPECTROMETRY; SUBSTRATES;

COAXIAL IMPACT-COLLISION ION SCATTERING SPECTROMETERS (CAICISS); KNUDSEN CELLS; PRE-DEPOSITION LAYERS; TIME-OF-FLIGHT (TOF) SPECTRA;

SEMICONDUCTING FILMS;

EID: 0034224887     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00792-6     Document Type: Article

References (4)

1. Wado H., Shimizu T., Ishida M. Appl. Phys. Lett. 67:1995;1672.
2. Jung Y.C., Wado H., Ohtani K., Ishida M. Appl. Phys. Lett. 68:1996;3001.
3. Jung Y.C., Miura H., Ohtani K., Ishida M. J. Cryst. Growth. 196:1999;88.
4. Ishii T., Mukaida M., Nishihara T., Hayashi S., Shinohara M. Jpn. J. Appl. Phys. 37:1998;L672.