Rashba effect in strained InGaAs/InP quantum wire structures

Science and Technology of Advanced Materials

Volumn 4, Issue 1, 2003, Pages 19-25

  Schapers Th ^a   Knobbe, J ^a   Van der Hart, A ^a   Hardtdegen, H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

InGaAs InP heterostructure; Quantum wire; Rashba effect; Spin orbit coupling magnetotransport; Two dimensional electron gas

Indexed keywords

ELECTRON GAS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

RASHBA EFFECTS;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0038340975     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1468-6996(03)00006-8     Document Type: Article

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