Spin-splitting transport in In0.75Ga0.25As/In0.75Al0.25As quantum wire field-effect-transistor

Physica B: Condensed Matter

Volumn 272, Issue 1-4, 1999, Pages 114-116

  Sato, Y ^a   Gozu, S ^a   Kikutani, T ^a   Yamada, S ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC CONDUCTANCE; ELECTRON TRANSITIONS; ENERGY GAP; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MAGNETORESISTANCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WIRES;

MODULATION DOPING; QUANTUM WIRE FIELD EFFECT TRANSISTORS (QWRFET); SPIN SPLITTING;

FIELD EFFECT TRANSISTORS;

EID: 0033344485     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00374-9     Document Type: Article

References (6)

1. A. Bychkov Yu, Rashba E.I. J. Phys. C. 17:1984;6039.
2. Nitta J., Akazaki J., Takayanagi H. Phys. Rev. Lett. 78:1997;1335.
3. Schäpers Th., Engels G., Lange J., Klocke Th., Hollfelder M., Lüth H. J. Appl. Phys. 83:1998;4324.
4. Datta S., Das B. Appl. Phys. Lett. 56:1990;665.
5. Gozu S., Hong C., Yamada S. Jpn. J. Appl. Phys. 37:1998;L1501.
6. Ramvall P., Carlsson N., Omling P., Samuelson L., Saifert M., Wang Q. Appl. Phys. Lett. 68:1996;1111.