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Journal of Applied Physics

Volumn 79, Issue 2, 1996, Pages 871-875

Quantized conductance in a split-gate point contact based on a pseudomorphic InGaAs/InP heterostructure

(7) Tietze, M F a Schapers Th a Appenzeller, J a Engels, G a Hollfelder, M a Lengeler, B a Luth H a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0038131432 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.360907 Document Type: Article

Times cited : (9)

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