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Volumn 93, Issue 10 1, 2003, Pages 5905-5910

Effects of ion implantation on electron centers in hydrogenated amorphous carbon films

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; FILM GROWTH; HYDROGENATION; ION IMPLANTATION; PARAMAGNETIC RESONANCE; RAMAN SCATTERING; SUBSTRATES;

EID: 0038312118     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564280     Document Type: Article
Times cited : (8)

References (33)
  • 3
    • 0040282525 scopus 로고    scopus 로고
    • J. Fallon, V. S. Veerasamy, C. A. Davis, J. Robertson, G. A. J. Amaratunga, W. I. Milne, and J. Koskinen, Phys. Rev. B 48, 4777 (1993); J. Robertson, Philos. Mag. B 76, 335 (1997).
    • (1997) Philos. Mag. B , vol.76 , pp. 335
    • Robertson, J.1
  • 4
    • 0001274744 scopus 로고
    • J. Tersoff, Phys. Rev. 44, 12039 (1991); X.-M Tang, J. Weber, Y. Baer, C. Müller, W. Hänni, and H. E. Hintermann, Phys. Rev. B 48, 10124 (1993).
    • (1991) Phys. Rev. , vol.44 , pp. 12039
    • Tersoff, J.1
  • 29
    • 0002578472 scopus 로고
    • Amorphous semiconductors
    • edited by M. H. Brodsky (Springer, Berlin)
    • Amorphous Semiconductors, Topics in Applied Physics 36, edited by M. H. Brodsky (Springer, Berlin, 1979).
    • (1979) Topics in Applied Physics , vol.36


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.