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Journal of the Korean Physical Society

Volumn 42, Issue SUPPL., 2003, Pages

Ion doped effect on the ferroelectric properties in Nb-doped Bi4Ti3O12

(5) Kim, Jin Soo a Kim, I W a Cho, J A b Song, T K b Lee, K S c

a University of Ulsan (South Korea)

b Changwon National University (South Korea)

c Inje University (South Korea)

Author keywords

BIT; BLSE; Dielectric; Ferroelectrics; FRAM; P E hysteresis loop

Indexed keywords

EID: 0038310287 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Conference Paper

Times cited : (6)

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