Effect of r.f. hydrogen plasma annealing on the properties of Si/SiO2 interface: A spectroscopic ellipsometry study

Thin Solid Films

Volumn 433, Issue 1-2 SPEC., 2003, Pages 367-370

  Paneva, A ^a   Szekeres, A ^b  

^a UNIVERSITY OF SOFIA   (Bulgaria)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

Hydrogen plasma annealing; Si SiO2 structure; Spectroscopic ellipsometry

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; ELLIPSOMETRY; HYDROGEN; INTERFACES (MATERIALS); OXIDATION; PLASMAS; STRESS ANALYSIS;

SPECTROSCOPIC ELLIPSOMETRY;

SILICA;

EID: 0038277021     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00394-8     Document Type: Conference Paper

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