Coulomb blockade in an ultrathin Ti nanowire at room temperature

Chinese Journal of Electronics

Volumn 12, Issue 3, 2003, Pages 451-453

  Yin, You ^a   Jiang, Jianfei ^a   Cai, Qiyu ^a   Yang, Tao ^a   Cai, Bingchu ^a  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

Author keywords

Coulomb blockade; Nanofabrication; Nanowire; Single electron devices; STM anodization

Indexed keywords

ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; ELECTROCHEMISTRY; ELECTRODES; ETCHING; GATEWAYS (COMPUTER NETWORKS); MIM DEVICES; OXIDATION; SCANNING TUNNELING MICROSCOPY; TUNNEL JUNCTIONS; ULTRATHIN FILMS;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 0038270152     PISSN: 10224653     EISSN: 20755597     Source Type: Journal    
DOI: None     Document Type: Article

References (14)

1. H.R. Zeller and I. Giaever, "Tunneling, zero-bias anomalies and small superconductors", Phys. Rev., Vol.181, pp.789-799, 1969.
2. D.V. Averin and K.K. Likharev, "Coulomb blockade of tunneling and coherent oscillations in small tunnel junctions", J. Low Temp. Phys., Vol.62, pp.345-372, 1986.
3. K.K. Likharev, "Single-electron transistors: Electrostatic analogs of the DC SQUID's", IEEE Trans. Magn., Vol.23, pp.1142-1145, 1987.
4. T.A. Fulton and G.J. Dolan, "Observation of single-electron charging effects in small tunnel junctions", Phys. Rev. Lett., Vol.59, No.l, pp.109-112, 1987.
5. U. Meirav, M. Kastner and S.J. Wind, "Single-electron charging and periodic conductance resonances in GaAs nanostructures", Phys. Rev. Lett., Vol.65, No.6, pp.771, 1990.
6. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki, "Room-temperature single-electron memory", IEEE Transactions on Electron Devices, Vol.41, No.9, pp.1628-1638, 1994.
7. A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano and N. Yokoyama, "Room temperature operation of Si single-electron memory with self-aligned floating dot gate", International Electron Devices Meeting, pp.952-954, Dec. 1996.
8. K. Yano, T. Ishii, T. Sano, et al., "Single-electron memory for giga-to-tera bit storage", Proceedings of the IEEE, Vol.87, No.4, pp.633-651, 1999.
9. L. Guo, E. Leobandung and Y. Chou, "A silicon single-electron transistor memory operating at room temperature". Science, Vol.275, pp.649-651, 1997.
10. K. Matsumoto, Y. Gotoh, T. Maeda, J.A. Dagata and J.S. Harris, "Room temperature Coulomb oscillation and memory effect for single electron memory made by pulse-mode A FM nano-oxidation process", IEDM'98 Technical Digest, pp.449-452, Dec. 1998.
11. K. Matsumoto, "STM/AFM nano-oxidation process to room-temperature-operated single-electron transistor and other devices", Proceedings of the IEEE, Vol.85, No.4, pp.612-628, 1997.
12. H. Sugimura, T. Uchida, N. Kitamura and H. Masuhara, "Tipinduced anodization of titanium surfaces by scanning tunneling microscopy: A humidity effect on nanolithography", Appl. Phys. Lett., Vol.63, No.9, pp.1288-1290, 1993.
13. E.S. Snow, P.M. Campbell and P.J. McMarr, "Fabrication of silicon nanostructures with a scanning tunneling Microscope", Appl. Phys. Lett, Vol.63, No.6, pp.749-751, 1993.
14. H. Sugimura and N. Nakagiri, "Area selective deposition of gold on silicon surface patterned by tip-induced anodization in scanning probe microscopy", Appl. Phys. Lett., Vol.66, No.11, pp.1430-1431, 1995.