Influence of the implantation angle on the generation of defects for Er implanted GaN

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 95-98

  Pipeleers, B ^a   Hogg, S M ^a,b   Vantomme, A ^a  

^a KU LEUVEN   (Belgium)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Channelling; Defects; Er; GaN; Ion implantation; RBS

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ERBIUM; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

CHANNELLING SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 0038243553     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00689-X     Document Type: Conference Paper

References (11)

1. Pearton S.J., Kuo C. MRS Bull. 22(2):1997;17.
2. Nakamura S., Fasol G. The Blue Laser Diode-GaN Based Light Emitters and Lasers. 1997;Springer, Berlin.
3. Shur M.S., Khan M.A. MRS Bull. 22(2):1997;44.
4. Steckl A.J., Zavada J.M. MRS Bull. 24(9):1999;33.
5. Alves E., da Silva M.F., Soares J.C., Bartels J., Vianden R., Abernathy C.R., Pearton S. MRS Int. J. Nitride Semicond. Res. 4S1:1999;G11.2.
6. Williams J.S. Rep. Prog. Phys. 49:1986;491.
7. Wu M.F., Vantomme A., Pattyn H., Langouche G. Appl. Phys. Lett. 67:1995;3866.
8. Hogg S.M., Pipeleers B., Vantomme A., Swart M. Appl. Phys. Lett. 80(23):2002;4363.
9. Vantomme A., Hogg S.M., Wu M.F., Pipeleers B., Swart M., Goodman S., Auret D., Iakoubovskii K., Adriaenssens G.J., Jacobs K., Moerman I. Nucl. Instr. and Meth. B. 175-177:2001;148.
10. Kucheyev S.O., Williams J.S., Jagadish C., Zou J., Li G. Phys. Rev. B. 62(12):2000;1.
11. Schmid K. Rad. Effects. 17:1973;201.