Characteristics of a field-effect transistor with stacked InAs quantum dots

Applied Physics Letters

Volumn 82, Issue 18, 2003, Pages 3092-3094

  Wang, T H ^a   Li, H W ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON GAS; HETEROJUNCTIONS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

DRAIN CURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 0038189559     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1572468     Document Type: Article

References (13)

1. T. H. Wang, H. W. Li, and J. M. Zhou, Appl. Phys. Lett. 78, 2160 (2001).
2. E. Ribeiro, E. Müller, T. Heinzel, H. Auderset, and K. Ensslin, Phys. Rev. B 58, 1506 (1998).
3. Q. Wan, T. H. Wang, M. Zhu, and C. L. Lin, Appl. Phys. Lett. 81, 538 (2002).
4. K. Yoh, J. Konda, S. Shina, and N. Nishiguchi, Jpn. J. Appl. Phys., Part 1 36, 4134 (4997).
5. J. Phillips, K. Kamath, T. Block, and P. Bhattacharya, Appl. Phys. Lett. 72, 3509 (1998).
6. T. H. Wang, H. W. Li, and J. M. Zhou, Appl. Phys. Lett. 79, 1537 (2001).
7. G. Yusa and H. Sakaki, Appl. Phys. Lett. 70, 345 (1997).
8. H. Son, J. Kim, M. Kim, and S. Hong, Jpn. J. Appl. Phys., Part 1 40, 2801 (2001).
9. K. Koike, K. Saitoh, S. Li, S. Sasa, M. Inoue, and M. Yano, Appl. Phys. Lett. 76, 1464 (2000).
10. N. Horiguchi, T. Futatsugi, Y. Nakata, and N. Yokoyama, Appl. Phys. Lett. 70, 2294 (1997).
11. A. J. Shields, M. P. O'Sullivan, I. Farrer, D. A. Ritchie, R. A. Hogg, M. L. Leadbeater, C. E. Norman, and M. Pepper, Appl. Phys. Lett. 76, 3673 (2000).
12. Fundamentals of III-V Devices: HBTs, MESFETs, and HFETs/HEMTs, edited by William Liu (Wiley, New York, 1999).
13. I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, Y. I. Yakovlev, A. I. Nikiforov, and C. J. Adkins, Phys. Rev. B 61, 10868 (2000).