Incorporation of hydrogen (1H and2H) into 4H-SiC during epitaxial growth

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 565-568

  Linnarsson, M K ^a   Forsberg, U ^b   Janson, M S ^a   Janzen E ^b   Svensson, B G ^a,c  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF OSLO   (Norway)

Author keywords

CVD; Deuterium; Hydrogen; SIMS

Indexed keywords

ANNEALING; ELECTRON GAS; EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE; CHEMICAL VAPOR DEPOSITION; DEUTERIUM; HYDROGEN; SUBSTRATES;

CARRIER GASES; HYDROGEN DEPTH DISTRIBUTION; HYDROGEN SOURCES; CARRIER GAS;

HYDROGEN; SILICON CARBIDE;

EID: 0013206354     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (7)

1. A. Schöner, K. Rottner, N. Nordell et al., Diamond Relat. Mater. 6, 1293 (1997).
2. D.J. Larkin, S.G. Sridhara and W.J. Choyke, J. Electron. Mater. 24, 289 (1995).
3. J.I. Pankov and N.M. Johnson, Hydrogen in semiconductors (Academic Press, New York, 1991).
4. S.P. Pearton, J.W. Corbett and M. Stavola, Hydrogen in Crystalline Semiconductors (Springer-Verlag, New York, 1991).
5. M.K. Linnarsson, M.S. Janson, S. Karlsson et al., Mat. Sci. and Eng. B61-62, 275 (1999).
6. M.S. Janson, A. Hallén, M.K. Linnarsson and B.G. Svensson, Phys. Rev. B64, 195202 (2001).
7. M. Linnarsson, M.S. Janson, U. Zimmermann et al., Appl. Phys. Lett. 79, 2016 (2001).