Experimental evidence of impact ionisation in InP HBT's designed for rapid digital applications: Implementation in a DC model

European Solid-State Device Research Conference

Volumn , Issue , 2001, Pages 323-326

  Maneux, C ^a   Martin, J C ^a   Labat, N ^a   Touboul, A ^a   Riet, M ^b,c   Benchimol, J L ^b,c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b OPTO+   (France)

^c France Telecom R and D   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DC MODEL; DIGITAL APPLICATIONS; EXPERIMENTAL EVIDENCE; INP-HBT;

EID: 0037753288     PISSN: 19308876     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2001.195266     Document Type: Conference Paper

References (4)

1. O. Wada, "Indium Phosphide-based Femtosecond Devices for Ultrahigh Throughput Communications and Signal-Processing Systems", International Conference on Indium Phosphide and Related Materials, 1999, pp. 7-10.
2. http://www. telecom. gouv. fr/rnrt
3. C. Canali, P. Pavan, A. Di Carlo, P. Lugli, R. Malik, M. Manfredi, A. Neviani, L. Vendrame, E. Zanoni, G. Zandler, "Experimental and monte carlo analysis of impact-ionization in AlGaAs/GaAs HBT's", IEEE Trans. Elec. Dev., Vol. 43, N11, 1996, pp. 1769-1776.
4. K. Yang, A. L. Gutierrez-Aitken, X. Zhang, G. I. Haddad, P. Bhattacharya, "SPICE-based DC and microwave characterization of InAlAs/InGaAs HBT's used for largebandwidth integrated transimpedance amplifiers", International Conference on Indium Phosphide and Related Materials, May 1995, pp. 448-451.