Experimental procedure for the evaluation of GaAs-based HBT's reliability

Microelectronics Journal

Volumn 32, Issue 4, 2001, Pages 357-371

  Maneux, C ^a   Labat, N ^a   Malbert, N ^a   Touboul, A ^a   Danto, Y ^a   Dumas, J M ^b   Riet, M ^c   Benchimol, J L ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b UNIVERSITY OF LIMOGES   (France)

^c OPTO+   (France)

Author keywords

Focused ion beam; Heterojunction bipolar transistors; Transmission line model

Indexed keywords

ELECTRIC LINES; ENERGY DISPERSIVE SPECTROSCOPY; INTERFACES (MATERIALS); ION BEAMS; OHMIC CONTACTS; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE TESTING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FOCUSED ION BEAMS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035311859     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(00)00106-3     Document Type: Article

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