-
1
-
-
0030110406
-
Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors
-
Liu W., Chau H-F., Beam E. III Thermal properties and thermal instabilities of InP-based heterojunction bipolar transistors. IEEE Trans. Electron. Dev. 43:1996;388-395.
-
(1996)
IEEE Trans. Electron. Dev.
, vol.43
, Issue.3
, pp. 388-395
-
-
Liu, W.1
Chau, H.-F.2
Beam E. III3
-
2
-
-
0032064920
-
FET and HEMT thermal impedances
-
Anholt R. FET and HEMT thermal impedances. Solid-State Electron. 42:1998;849-855.
-
(1998)
Solid-State Electron.
, vol.42
, pp. 849-855
-
-
Anholt, R.1
-
3
-
-
0035175289
-
Thermal impact of InGaAs on InP-based HBTs
-
Ray M, Hill D, Hartin O, Johnson K, Li P. Thermal impact of InGaAs on InP-based HBTs. In: Proceedings of GaAs IC Symposium, 2001. p. 261-4.
-
(2001)
Proceedings of GaAs IC Symposium
, pp. 261-264
-
-
Ray, M.1
Hill, D.2
Hartin, O.3
Johnson, K.4
Li, P.5
-
5
-
-
0028425206
-
Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures
-
Chen G., Tien C.L., Wu X., Smith J.S. Thermal diffusivity measurement of GaAs/AlGaAs thin-film structures. J. Heat Transfer. 116:1994;325-331.
-
(1994)
J. Heat Transfer
, vol.116
, pp. 325-331
-
-
Chen, G.1
Tien, C.L.2
Wu, X.3
Smith, J.S.4
-
6
-
-
0032065102
-
HBT thermal element design using an electro/thermal simulator
-
Anholt R. HBT thermal element design using an electro/thermal simulator. Solid-State Electron. 42:1998;856-864.
-
(1998)
Solid-State Electron.
, vol.42
, pp. 856-864
-
-
Anholt, R.1
-
7
-
-
0032065985
-
Thermal impedances of multi-finger heterojunction bipolar transistors
-
Anholt R. Thermal impedances of multi-finger heterojunction bipolar transistors. Solid-State Electron. 42:1998;865-869.
-
(1998)
Solid-State Electron.
, vol.42
, pp. 865-869
-
-
Anholt, R.1
-
8
-
-
0033323377
-
Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods
-
Yeats B. Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods. In: Proceedings of GaAs IC Symposium, 1999. p. 59-62.
-
(1999)
Proceedings of GaAs IC Symposium
, pp. 59-62
-
-
Yeats, B.1
-
9
-
-
0038062475
-
Effects of device design on InP-based HBT thermal resistance
-
Thomas S. III, Foschaar J.A., Fields C.H., Madhav M.M., Sokolich M., Rajavel R.D.et al. Effects of device design on InP-based HBT thermal resistance. IEEE Trans. Dev. Mater. Reliab. 1:2001;185-189.
-
(2001)
IEEE Trans. Dev. Mater. Reliab.
, vol.1
, pp. 185-189
-
-
Thomas S. III1
Foschaar, J.A.2
Fields, C.H.3
Madhav, M.M.4
Sokolich, M.5
Rajavel, R.D.6
-
13
-
-
0006986020
-
Technique provides measurement of HBT thermal resistance
-
Fuller N.C.M. Technique provides measurement of HBT thermal resistance. Microwaves and RF. (February):1997;55-58.
-
(1997)
Microwaves and RF
, Issue.FEBRUARY
, pp. 55-58
-
-
Fuller, N.C.M.1
-
16
-
-
0003736569
-
-
Properties of indium phosphide, London: INSPEC
-
Brice JC. In: Properties of indium phosphide, EMIS Datareviews Series No. 6. London: INSPEC; 1991. p. 20-1.
-
(1991)
EMIS Datareviews Series
, vol.6
, pp. 20-21
-
-
Brice, J.C.1
-
17
-
-
0000370588
-
Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys
-
Maycock P.D. Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys. Solid-State Electron. 10:1967;161-168.
-
(1967)
Solid-State Electron.
, vol.10
, pp. 161-168
-
-
Maycock, P.D.1
-
19
-
-
0001234411
-
Thermal, electrical and optical properties of (In,Ga)As alloys
-
Abrahams M.S., Braunstein R., Rosi F.D. Thermal, electrical and optical properties of (In,Ga)As alloys. J. Phys. Chem. Solids. 95:1959;204-210.
-
(1959)
J. Phys. Chem. Solids
, vol.95
, pp. 204-210
-
-
Abrahams, M.S.1
Braunstein, R.2
Rosi, F.D.3
|