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Volumn 43, Issue 6, 2003, Pages 853-858

The effects of ternary alloys on thermal resistances of HBTs, HEMTs, and laser diodes

Author keywords

[No Author keywords available]

Indexed keywords

HEAT RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; HIGH TEMPERATURE EFFECTS; SEMICONDUCTOR LASERS; SUPERLATTICES; TERNARY SYSTEMS; THERMAL CONDUCTIVITY;

EID: 0038147511     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00070-2     Document Type: Conference Paper
Times cited : (2)

References (20)
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  • 2
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    • Chen, G.1    Tien, C.L.2    Wu, X.3    Smith, J.S.4
  • 6
    • 0032065102 scopus 로고    scopus 로고
    • HBT thermal element design using an electro/thermal simulator
    • Anholt R. HBT thermal element design using an electro/thermal simulator. Solid-State Electron. 42:1998;856-864.
    • (1998) Solid-State Electron. , vol.42 , pp. 856-864
    • Anholt, R.1
  • 7
    • 0032065985 scopus 로고    scopus 로고
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    • Anholt R. Thermal impedances of multi-finger heterojunction bipolar transistors. Solid-State Electron. 42:1998;865-869.
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    • Anholt, R.1
  • 8
    • 0033323377 scopus 로고    scopus 로고
    • Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods
    • Yeats B. Inclusion of topside metal heat spreading in the determination of HBT temperatures by electrical and geometrical methods. In: Proceedings of GaAs IC Symposium, 1999. p. 59-62.
    • (1999) Proceedings of GaAs IC Symposium , pp. 59-62
    • Yeats, B.1
  • 13
    • 0006986020 scopus 로고    scopus 로고
    • Technique provides measurement of HBT thermal resistance
    • Fuller N.C.M. Technique provides measurement of HBT thermal resistance. Microwaves and RF. (February):1997;55-58.
    • (1997) Microwaves and RF , Issue.FEBRUARY , pp. 55-58
    • Fuller, N.C.M.1
  • 16
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    • Properties of indium phosphide, London: INSPEC
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  • 17
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.