Structural and electrical properties of silicon epitaxial layers grown by LPE and CVD on identical polycrystalline substrates

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 680-685

  Wagner, G ^a   Wawra, H ^a   Dorsch, W ^b   Albrecht, M ^b   Krome, R ^b   Strunk, H P ^b   Riedel, S ^c   Moller H J ^c   Appel, W ^d  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^c TU BERGAKADEMIE FREIBERG   (Germany)

^d Institut fur Mikroelektronik Stuttgart   (Germany)

Author keywords

Dislocation; Epitaxy; Grain boundary; Lifetime of minority carrier; Polycrystalline silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY MEASUREMENT; ETCHING; GRAIN BOUNDARIES; LIQUID PHASE EPITAXY; POLYCRYSTALLINE MATERIALS; SOLUTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

LIFETIME MINORITY CARRIER; RECOMBINATION STRENGTH;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031547416     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00049-3     Document Type: Article

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