80GHz 4:1 frequency divider IC using non-self-aligned InP/InGaAs heterostructure bipolar transistors

Electronics Letters

Volumn 36, Issue 1, 2000, Pages 34-35

  Nakajima, H ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUIT MANUFACTURE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DIVIDE-BY-FOUR FREQUENCY DIVIDER INTEGRATED CIRCUITS;

FREQUENCY DIVIDING CIRCUITS;

EID: 0033640020     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000111     Document Type: Article

References (5)

1. YAMAHATA, S., NAKAJIMA, H., IDA, M., NIIYAMA, H., WATANABE, N., SANO, E., and ISHII, Y.: 'Reliable carbon-doped InP/InGaAs HBTs technology for low-power 40-GHz static frequency divider'. Extended Abstracts Int. Conf. Solid State Devices and Materials, Tokyo, 1999, pp. 570-571
2. KURISHIMA, K., YAMAHATA, S., NAKAJIMA, H., ITO, H., and WATANABE, N.: 'Initial degradation of base-emitter junction in carbon-doped InP/InGaAs HBT's under bias and temperature stress', IEEE Electron Device Lett., 1998, 19, pp. 303-305
3. ISHII, K., ICHINO, H., TOGASHI, M., KOBAYASHI, Y., and YAMAGUCHI, C.: 'Very-high-speed Si bipolar static frequency dividers with new T-type flip-flops', IEEE J. Solid-State Circuits, 1995, (30), pp. 19-24
4. NAKAJIMA, H., ISHIBASHI, T., SANO, E., IDA, M., YAMAHATA, S., and ISHII, Y.: 'InP-based high-speed electronics'. To be presented at Int. Electron Devices Meeting, 1999
5. ISHIHARA, N., KONAKA, S., and KAMOTO, T.: '3.5GHz bandwidth, 30dB gain Si monolithic amplifier', Electron. Lett., 1989, 25, pp. 217-218