74GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs

Electronics Letters

Volumn 35, Issue 23, 1999, Pages 2024-2025

  Murata, K ^a   Yamane, Y ^b  

^a NTT Network Innovation Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; FLIP FLOP CIRCUITS; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DIGITAL DYNAMIC FREQUENCY DIVIDER; SEMICONDUCTING INDIUM ALUMINUM ARSENIDE;

FREQUENCY DIVIDING CIRCUITS;

EID: 0033342656     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19991382     Document Type: Article

References (8)

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2. MADDEN, C.J., SNOOK, D.R., TUYL, R.L.V., LE, M.V., and NGUYEN, L.D.: 'A novel 75GHz InP HEMT dynamic divider'. IEEE GaAs IC Symp. Dig., 1996, pp. 137-140
3. UMEDA, Y., OSAFUNE, K., ENOKI, T., YOKOYAMA, H., ISHII, Y., and IMAMURA, Y.: 'Over 60-GHz design technology for an SCFL dynamic frequency divider using InP-based HEMT's', IEEE Trans. Microw. Theory Tech., 1998, 46, (9), pp. 1209-1214
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5. TAKADA, T., and OHHATA, M.: 'A new interfacing method 'SCFL-interfacing' for ultra high-speed logic IC's'. Tech. Dig. IEEE GaAs IC Symp., 1990, pp. 211-214
6. MURATA, K., OTSUJI, T., OHHATA, M., TOGASHI, M., SANO, E., and SUZUKI, M.: 'A novel high-speed latching operation flip-flop (HLO-FF) circuit and its application to a 19Gb/s decision circuit using 0.2μm GaAs MESFET', IEEE J Solid-State Circuits, 1995, 30, (10), pp. 1101-1108
7. ENOKI, T., UMEDA, Y., OSAFUNE, K., ITO, H., and ISHII, Y.: 'Ultrahigh-speed InAlAs/InGaAs HEMT ICs using pn-level-shift diodes'. Tech. Digest Int. Electron Device Meet., 1995, pp. 193-196
8. ENOKI, T., ITO, H., IKUTA, K., and ISHII, Y.: '0.1μm InAlAs/InGaAs HEMT with an InP-recess-etch stopper grown by MOCVD'. Int. Conf. Indium Phosphide and Related Materials, Hokkaido, Japan, 1995, pp. 81-84