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Volumn 80, Issue 14, 2002, Pages 2496-2498

Room-temperature 1.54-μm electroluminescence from the Au/nanometer (SiO2:Er/Si/SiO2:Er)/n+-Si structure

Author keywords

[No Author keywords available]

Indexed keywords

FULL WIDTHS AT HALF MAXIMUMS; GAUSSIAN BANDS; PEAK ENERGY; REVERSE BIAS; ROOM TEMPERATURE; SI LAYER;

EID: 79956002432     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467623     Document Type: Article
Times cited : (9)

References (15)
  • 14
    • 0027592663 scopus 로고
    • The process of energy transfer from the bound excitons at nanometer Si/Si oxide interface to excite Er was suggested by and, and
    • The process of energy transfer from the bound excitons at nanometer Si/Si oxide interface to excite Er was suggested by L. N. Yassievich and L. C. Kimmerling, Semicond. Sci. Technol. 8, 718 (1993) and
    • (1993) Semicond. Sci. Technol. , vol.8 , pp. 718
    • Yassievich, L.N.1    Kimmerling, L.C.2
  • 15
    • 0001680374 scopus 로고
    • prb PRBMDO 0163-1829
    • S. Coffa et al., Phys. Rev. B 48, 11782 (1993). prb PRBMDO 0163-1829
    • (1993) Phys. Rev. B , vol.48 , pp. 11782
    • Coffa, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.