Gas source molecular beam epitaxy growth of GaN-rich side of GaNP alloys and their observation by scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 SUPPL. B, 1997, Pages 3810-3813

  Kuroiwa, Reiko ^a   Asahi, Hajime ^a   Iwata, Kakuya ^a   Kim, Seong Jin ^a   Noh, Joo Hyong ^a   Asami, Kumiko ^a   Gonda, Shun Ichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

ECR MBE; GaNP; Phase separation; RHEED; STM

Indexed keywords

EID: 0001469004     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3810     Document Type: Article

References (5)

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