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Journal of Crystal Growth

Volumn 229, Issue 1, 2001, Pages 48-52

Hexagonal GaN1-xPx growth by laser-assisted metalorganic chemical vapor deposition

(3) Kikawa, Junjiroh a Yoshida, Seikoh a Itoh, Yoshitem a

a Furukami Electric Co Ltd (Japan)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

AMMONIA; ANNEALING; COMPOSITION EFFECTS; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PYROLYSIS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH;

LASER-ASSISTED METALLORGANIC CHEMICAL VAPOR DEPOSITION (LA-MOCVD);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035398120 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01047-8 Document Type: Article

Times cited : (18)

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