Annealing of amorphous Ru-Si-O and Ir-Si-O films in vacuum or dry oxygen

Journal of Applied Physics

Volumn 93, Issue 8, 2003, Pages 4576-4583

  Giauque, P H ^a   Nicolet, M A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; OXIDATION; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THERMODYNAMICS; VACUUM; X RAY DIFFRACTION ANALYSIS;

DRY OXYGEN;

AMORPHOUS FILMS;

EID: 0038003933     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1542919     Document Type: Article

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