Stability of conducting amorphous Ru-Si-O thin films under oxygen annealing

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 403-408

  Cherry, H B ^a   Giauque, P H ^b   Nicolet, M A ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CRYSTAL ORIENTATION; MAGNETRON SPUTTERING; OXYGEN; RUTHENIUM COMPOUNDS; SPECTROMETRY; SUBSTRATES; THIN FILMS;

BACKSCATTERING SPECTROMETRY;

CONDUCTIVE FILMS;

EID: 0034824843     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00474-3     Document Type: Article

References (6)

1. S.M. Gasser, E. Kolawa, M.-A. Nicolet, Reactively sputtered Ru-Si-O films, J. Appl. Phys. 86 (4) (1999) 1974-1981.
2. S.M. Gasser, R. Ruiz, E. Kolawa, M.-A. Nicolet, Instability of amorphous Ru-Si-O thin films under thermal oxidation, J. Electrochem. Soc. 146 (4) (1999) 1546-1548.
3. B.D. Cullity, Elements of X-ray Diffraction, Addison-Wesley, Menlo Park, CA, 1978.
4. 2 as a diffusion barrier between Al and Si substrate, Mater. Lett. 6 (5-6) (1988) 177-180.
5. E.M. Levin, C.R. Robbins, H.F. McMurdie, Phase Diagrams for Ceramists, The American Ceramic Society, Columbus, OH, 1964.
6. 2, Phys. Rev. B 1 (4) (1970) 1494.