Annealing of amorphous Ir18Si15O67 films in dry oxygen

Thin Solid Films

Volumn 406, Issue 1-2, 2002, Pages 299-301

  Giauque, P H ^a   Cherry, H B ^b   Nicolet, M A ^a   Bernard, C ^c   Pisch, A ^c  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c UNIV GRENOBLE ALPES   (France)

Author keywords

Amorphous materials; Oxidation; Oxides; Sputtering

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRIC CONDUCTIVITY; IRIDIUM COMPOUNDS; MAGNETRON SPUTTERING; OXIDATION; OXYGEN; SILICON WAFERS; SPUTTER DEPOSITION; SUBSTRATES; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CHEMICAL INERTNESS; DRY OXYGEN;

AMORPHOUS FILMS;

EID: 0037051262     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01789-8     Document Type: Article

References (5)