Physical analysis of Ti-migration in 33 Å gate oxide breakdown

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 210-215

  Pey, K L ^a   Tung, C H ^a   Lin, W H ^a   Radhakrishnan, M K ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC POTENTIAL; ELECTROMIGRATION; MOSFET DEVICES; PERMITTIVITY; POLYSILICON; SEMICONDUCTOR JUNCTIONS; TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

DRAIN CURRENTS; GATE OXIDES;

GATES (TRANSISTOR);

EID: 0036088329     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)