C stability in Si1-yCy epitaxial films grown by low-temperature chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 A, 2003, Pages 1499-1502

  Yagi, Shuhei ^a   Abe, Katsuya ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Low temperature epitaxy; Plasma CVD; Si1 yCy; SiC precipitation; Strained group IV alloy

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COMPLEXATION; COMPUTER SIMULATION; EPITAXIAL GROWTH; FILM GROWTH; LOW TEMPERATURE EFFECTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PRECIPITATION (CHEMICAL); SILICON CARBIDE; THERMAL DIFFUSION; THERMODYNAMIC STABILITY;

EPITAXIAL FILMS; SOURCE GASES;

CARBON;

EID: 0037932031     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1499     Document Type: Article

References (10)

1. M. Ershov and V. Ryzhii: J. Appl. Phys. 76 (1994) 1924.
2. P. Dollfus, S. Galdin, P. Hesto and J. E. Velázquez: IEEE Trans. Electron Devices 47 (2000) 1247.
3. A. R. Bean and R. C. Newman: J. Phys. Chem. Solids 33 (1971) 255.
4. S. Yagi, K. Abe, T. Okabayashi, Y. Yoneyama A. Yamada and M. Konagai: Jpn. J. Appl. Phys. 41 (2002) 2472.
5. K. Abe, S. Yagi, T. Okabayashi, A. Yamada and M. Konagai: Jpn. J. Appl. Phys. 40 (2001) 4440.
6. K. Abe, T. Watahiki, A. Yamada and M. Konagai: Jpn. J. Appl. Phys. 37 (1998) 1202.
7. S. Yagi, K. Abe, A. Yamada and M. Konagai: Jpn. J. Appl. Phys. 39 (2000) L1078.
8. D. R. Lide: CRC Handbook of Chemistry and Physics 76th edition, ed. David R. Lide (CRC Press, Boca Raton, 1995) Chap. 9 p. 52.
9. A. R. Powell, K. Eberl, F. E. LeGoues, B. A. Ek and S. S. Ier: J. Vac. Sci. Technol. B 11 (1993) 1064.
10. R. C. Newman and J. Wakefield: J. Phys. Chem. Solids 19 (1961) 230.