Phosphorous doping of strain-induced Si1-yCy, epitaxial films grown by low-temperature chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2472-2475

  Yagi, Shuhei ^a   Abe, Katsuya ^a   Okabayashi, Takashi ^a   Yoneyama, Yuichi ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Low temperature Si epitaxy; P doping; Photo CVD; Plasma CVD; Si1 yC y

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; PHOSPHORUS; SEMICONDUCTOR DOPING; SUBSTRATES;

LOW-TEMPERATURE SI EPITAXY; P DOPING; PHOTO-CVD;

EPITAXIAL GROWTH;

EID: 0038319701     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2472     Document Type: Article

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