X-ray double crystal and X-ray topographic characterization of silicon carbide thin films on silicon, titanium carbide, 6H-silicon carbide, and aluminum nitride/sapphire substrates

Thin Solid Films

Volumn 274, Issue 1-2, 1996, Pages 23-30

  Chaudhuri, J ^a   Thokala, R ^a   Edgar, J H ^b   Sywe, B S ^b,c  

^a Wichita State University   (United States)

^b Kansas State University   (United States)

^c RUTGERS UNIVERSITY   (United States)

Author keywords

Epitaxy; Silicon carbide; Structural properties; X ray diffraction

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; SILICON; SILICON CARBIDE; SUBSTRATES; THERMAL EXPANSION; TITANIUM CARBIDE; X RAY ANALYSIS; X RAY CRYSTALLOGRAPHY;

ALUMINUM NITRIDE; DISLOCATION DENSITIES; EPITAXIAL SILICON CARBIDE THIN FILMS; SILICON CARBIDE THIN FILMS; X RAY DOUBLE CRYSTAL DIFFRACTOMETRY; X RAY ROCKING CURVES; X RAY TOPOGRAPHY; ZINC BLENDE STRUCTURE;

THIN FILMS;

EID: 0030101087     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)07087-7     Document Type: Article

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