Quantitative analysis of tungsten, oxygen and carbon concentrations in the microcrystalline silicon films deposited by hot-wire CVD

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 110-115

  Bouree J E ^a   Guillet, J ^b   Grattepain, C ^c   Chaumont, J ^d  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^c THALES TRT France   (France)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Hot wire chemical vapor deposition; Microcrystalline silicon; Secondary ion mass spectrometry; Tungsten

Indexed keywords

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SILANES; THIN FILMS; TUNGSTEN;

HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD);

SEMICONDUCTING FILMS;

EID: 0037850831     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00086-5     Document Type: Conference Paper

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