Microcrystalline silicon deposited by the hot-wire CVD technique

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 69, Issue , 2000, Pages 284-288

  Guillet, J ^a   Niikura, C ^b   Bouree J E ^a   Kleider, J P ^a   Longeaud, C ^b   Bruggemann R ^a  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b SUPELEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; DIFFRACTION GRATINGS; ELLIPSOMETRY; PHOTOCONDUCTIVITY; SILANES; SILICON; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); MICROCRYSTALLINE SILICON;

CRYSTALLINE MATERIALS;

EID: 0033903647     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(99)00412-2     Document Type: Article

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