Spin degree of freedom in ferromagnetic semiconductor heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 16, Issue 1, 2003, Pages 104-110

  Matsukura, F ^a,b   Chiba, D ^a   Ohno, Y ^a   Dietl, T ^b   Ohno, H ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

Control of ferromagnetism; Ferromagnetic semiconductor; Magnetoresistance; Spin injection; Spintronics

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LEVELS; FERROMAGNETISM; LIGHT EMITTING DIODES; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM COMPOUNDS;

SPIN INJECTION;

HETEROJUNCTIONS;

EID: 0037840429     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00596-9     Document Type: Conference Paper

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