Substrate manipulation by insertion of a thin and strained 2D layer: Effect on Ge/Si growth

Journal of Crystal Growth

Volumn 256, Issue 1-2, 2003, Pages 1-6

  Simon, L ^a   Louis, P ^a   Pirri, C ^a   Aubel, D ^a   Bischoff, J L ^a   Kubler, L ^a   Bolmont, D ^a  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

Author keywords

A1. Strain; A1. Stress; A3. Quantum dots; B1. Ge islands; B1. Silicon

Indexed keywords

SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STRAIN; SUBSTRATES;

INTERFACIAL STRAIN;

EPITAXIAL GROWTH;

EID: 0037811032     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01292-2     Document Type: Article

References (21)

1. van der Merwe J.H., Ball C.A.B. Matthews J.W. Epitaxial Growth, Part B. 1975;495-528 Academic, New York.
2. Priester C., Lannoo M. Phys. Rev. Lett. 75:1995;93.
3. Chen Y., Washburn J. Phys. Rev. Lett. 77:1996;4046.
4. Tersoff J., Legoues F. Phys. Rev. B. 22:1994;3570.
5. Muller P., Kern R. Surf. Sci. 457:2000;229.
6. Jesson D.E., Kästner M., Voigtländer B. Phys. Rev. Lett. 84:2000;330.
7. Aumann C.E., Mo Y.W., Lagally M.G. Appl. Phys. Lett. 59:1991;1061.
8. Chen X., Wu F., Zhang Z., Lagally M.G. Phys. Rev. Lett. 73:1994;850.
9. Altfeder I.B., Narayanamuri V., Chen D.M. Phys. Rev. Lett. 88:2002;206801.
10. Dentel D., Bischoff J.L., Kubler L., Werkmann J., Romeo M. J. Crystal Growth. 191:1998;697.
11. By working at a temperature between 400° to 500°C, a high deposition rate for Si (between 0.5 and 1 Å/s), the segregation is limited and sharp Ge/Si interfaces are obtained. (See for example E. Müller et al., Thin Solid Films 183 (1989) 165, M. Takahasi et al., Jpn. J. Appl. Phys. 34 (1995) 2278, and D. Dentel et al., Surf. Rev. and Lett. 6 (1991) 1). But for an Si deposition rate, two order of magnitude lower than in our experiment, a segregation of 0.8 Ge ML through a 1 nm thick cap layer of Si deposited at 500°C has been measured by Low Energy Ion Scattering Spectroscopy (Takashi et al., Surf. Sci. 393 (1997) L93).
12. By working at a temperature between 400° to 500°C, a high deposition rate for Si (between 0.5 and 1 Å/s), the segregation is limited and sharp Ge/Si interfaces are obtained. (See for example E. Müller et al., Thin Solid Films 183 (1989) 165, M. Takahasi et al., Jpn. J. Appl. Phys. 34 (1995) 2278, and D. Dentel et al., Surf. Rev. and Lett. 6 (1991) 1). But for an Si deposition rate, two order of magnitude lower than in our experiment, a segregation of 0.8 Ge ML through a 1 nm thick cap layer of Si deposited at 500°C has been measured by Low Energy Ion Scattering Spectroscopy (Takashi et al., Surf. Sci. 393 (1997) L93).
13. By working at a temperature between 400° to 500°C, a high deposition rate for Si (between 0.5 and 1 Å/s), the segregation is limited and sharp Ge/Si interfaces are obtained. (See for example E. Müller et al., Thin Solid Films 183 (1989) 165, M. Takahasi et al., Jpn. J. Appl. Phys. 34 (1995) 2278, and D. Dentel et al., Surf. Rev. and Lett. 6 (1991) 1). But for an Si deposition rate, two order of magnitude lower than in our experiment, a segregation of 0.8 Ge ML through a 1 nm thick cap layer of Si deposited at 500°C has been measured by Low Energy Ion Scattering Spectroscopy (Takashi et al., Surf. Sci. 393 (1997) L93).
14. By working at a temperature between 400° to 500°C, a high deposition rate for Si (between 0.5 and 1 Å/s), the segregation is limited and sharp Ge/Si interfaces are obtained. (See for example E. Müller et al., Thin Solid Films 183 (1989) 165, M. Takahasi et al., Jpn. J. Appl. Phys. 34 (1995) 2278, and D. Dentel et al., Surf. Rev. and Lett. 6 (1991) 1). But for an Si deposition rate, two order of magnitude lower than in our experiment, a segregation of 0.8 Ge ML through a 1 nm thick cap layer of Si deposited at 500°C has been measured by Low Energy Ion Scattering Spectroscopy (Takashi et al., Surf. Sci. 393 (1997) L93).
15. Vailionis A., Cho B., Glass G., Desjardins P., Cahill D.G., Greene J.E. Phys. Rev. Lett. 85:2000;3672.
16. Le Thanh V., Yam V., Boucaud P., Fortuna F., Ulysse C., Bouchier D., Vervoort L., Lourtioz J.M. Phys. Rev. B. 60:1999;5851.
17. Yam V., le Thanh V., Zeng Y., Boucaud P., Bouchier D. Phys. Rev. B. 63:2001;33313.
18. Schmidt O.G., Kienzle O., Hao Y., Eberl K., Ernst F. Appl. Phys. Lett. 74:1999;1272.
19. Priester C. Phys. Rev. B. 63:2001;153303.
20. Tersoff J. Phys. Rev. B. 43:1991;9377.
21. Ross F.M., Tersoff J., Tromp R.M. Phys. Rev. Lett. 80:1998;984.