SCOPUS 정보 검색 플랫폼

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 280-283

Characterization of defects in InGaAsN grown by molecular-beam epitaxy

(4) Fleck, A a Thompson, D A a Robinson, B J a Yuan, L a

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; HALL EFFECT; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

ELECTRICAL DEFECTS; OPTICAL DEFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034852265 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

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