Large-area x-ray topographs of lattice undulation of bonded silicon-on-insulator wafers

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 2 A, 2003, Pages

  Fukuda, Kazunori ^a   Yoshida, Takayoshi ^a   Shimura, Takayoshi ^a   Yasutake, Kiyoshi ^a   Umeno, Masataka ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FUKUI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Lattice undulation; Quasi periodical pattern; Silicon on insulator; Synchrotron large beam; Synchrotron X ray topography

Indexed keywords

CRYSTAL LATTICES; GONIOMETERS; SILICON ON INSULATOR TECHNOLOGY; SYNCHROTRON RADIATION; X RAYS;

LATTICE UNDULATION; SILICON ON INSULATOR WAFERS; X RAY TOPOGRAPHS;

SILICON WAFERS;

EID: 0037800304     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.42.L117     Document Type: Letter

References (9)

1. J. Matsui, Y. Tsusaka, K. Yokoyama, S. Takeda, M. Urakawa, Y. Kagoshima and S. Kimura: J. Cryst. Growth 237-239 (2002) 317.
2. W. P. Maszara, B.-L. Jiang, A. Yamada, G. A. Rozgonyi, H. Baumgart and A. J. R. de Kock: J. Appl. Phys. 69 (1991) 257.
3. S. Kimura, A. Ogura and T. Ishikawa: Appl. Phys. Lett. 68 (1996) 693.
4. J. Härtwig, S. Kohler, W. Ludwig, H. Moriceau, M. Ohler and E. Prieur: Cryst. Res. Technol. 37 (2002) 705.
5. F. Fukuda, T. Yoshida, T. Shimura, K. Yasutake and M. Umeno: Jpn. J. Appl. Phys. 41 (2002) L1325.
6. T. Yonehara, K. Sakaguti and N. Sato: Appl. Phys. Lett. 64 (1994) 2108.
7. M. Bruel, B. Aspar and A. J. Auberton-Hervé: Jpn. J. Appl. Phys. 36 (1997) 1636.
8. S. Goto, K. Takeshita, Y. Suzuki, H. Ohashi, Y. Asano, H. Kimura, T. Matsushita, N. Yagi, M. Isshiki, H. Yamazaki, Y. Yoneda, K. Umetani and T. Ishikawa: Nucl. Instrum. & Methods Phys. Res. A 467/468 (2002) 682.
9. Y. Chikaura, S. Iida, S. Kawado, K. Mizuno, S. Kimura, J. Matsui, M. Umeno, T. Ozaki, T. Shimura, Y. Suzuki, K. Izumi, K. Kawasaki, K. Kajiwara and T. Ishikawa: J. Phys. D 34 (2001) A158.