Observation of lattice undulation of commercial bonded silicon-on-insulator wafers by synchrotron X-ray topography

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 11 B, 2002, Pages

  Fukuda, Kazunori ^a   Yoshida, Takayoshi ^a   Shimura, Takayoshi ^a   Yasutake, Kiyoshi ^a   Umeno, Masataka ^b  

^a OSAKA UNIVERSITY   (Japan)

^b FUKUI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Lattice undulation; Silicon on insulator; Smart Cut; SOI Epi Wafer; Synchrotron X ray topography

Indexed keywords

DELAMINATION; HYDROGEN; SILICON ON INSULATOR TECHNOLOGY; SYNCHROTRON RADIATION; X RAY ANALYSIS;

X-RAY TOPOGRAPHY;

SILICON WAFERS;

EID: 0037113681     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1325     Document Type: Article

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