Implantation masking technology for selective porous silicon formation

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 1, 2003, Pages 241-245

  Pagonis, D ^a   Kaltsas, G ^a   Nassiopoulou, A G ^a  

^a INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DOPING (ADDITIVES); ION IMPLANTATION; MASKS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SURFACES;

IMPLANTATION MASKING TECHNOLOGY; LIMITING FACTOR; POROUS SILICON FORMATION; SILICON MEMBRANES; SURFACE CONCENTRATION;

POROUS SILICON;

EID: 0037793281     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306508     Document Type: Conference Paper

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