Depth profiling of the lateral pore size and correlation distance in thin porous silicon layers by grazing incidence small angle X-ray scattering

Journal of the Electrochemical Society

Volumn 150, Issue 7, 2003, Pages

  Ferrero, C ^a   Servidori, M ^b   Thiaudiere D ^c,d   Milita, S ^b   Lequien, S ^e   Sama, S ^b   Setzu, S ^f,g   Metzger, T H ^a  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b CNR   (Italy)

^c Centre National de la Recherche Scientifique   (France)

^d SYNCHROTRON SOLEIL   (France)

^e CNRS   (France)

^f Laboratoire de Spectrometrie Physique   (France)

^g UNIVERSITY OF CAGLIARI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; COMPOSITION; CURRENT DENSITY; POROSITY; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY SCATTERING;

ANODIZATION; GRAZING INCIDENCE SMALL ANGLE X RAY SCATTERING; X RAY REFLECTIVITY MEASUREMENT;

POROUS SILICON;

EID: 0037768773     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1582465     Document Type: Article

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