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Volumn 34, Issue 6, 2001, Pages 841-845

Porous silicon characterization by x-ray reflectivity: Problems arising from using a vacuum environment with synchrotron beam

(8) Sama, S a Ferrero, C b Lequien, S c Milita, S a Romestain, R d Servidori, M a Setzu, S d,e Thiaudiere, D f,g

a CNR (Italy)

b EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

c CNRS (France)

d Laboratoire de Spectrometrie Physique (France)

e UNIVERSITY OF CAGLIARI (Italy)

f Centre National de la Recherche Scientifique (France)

g SYNCHROTRON SOLEIL (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; CURRENT DENSITY; ELECTROLYTES; FILM GROWTH; INTERFACES (MATERIALS); IRRADIATION; PHOTONS; POROSITY; SEMICONDUCTOR DOPING; SUBSTRATES; SURFACE ROUGHNESS; SYNCHROTRON RADIATION; THICKNESS MEASUREMENT; X RAY ANALYSIS;

X-RAY REFLECTIVITY;

POROUS SILICON;

EID: 0035925512 PISSN: 00223727 EISSN: None Source Type: Journal
DOI: 10.1088/0022-3727/34/6/301 Document Type: Article

Times cited : (6)

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