A comparative study for metastable defect creation and annealing kinetics and their relation to photoconductivity in a-Si1-xCx:H

Journal of Non-Crystalline Solids

Volumn 321, Issue 1-2, 2003, Pages 103-109

  Kodolbaş, Alp Osman ^a   Öktü, Özcan ^a  

^a HACETTEPE UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; ANNEALING; PHOTOCONDUCTIVITY; PHOTOCURRENTS; REACTION KINETICS;

METASTABLE DEFECTS;

CARBON;

EID: 0037766218     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00106-6     Document Type: Article

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