Light-induced metastable changes in defect density and photoconductivity of a-Si:H between 4.2 and 300 K

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 432-435

  Stradins, P ^a   Fritzsche, H ^a  

^a UNIVERSITY OF CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; DEFECTS; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; KINETIC THEORY; PHOTOCONDUCTIVITY; PHOTONS;

CONSTANT PHOTOCURRENT METHOD; CREATION EFFICIENCY; DEFECT CONCENTRATION; EXPOSURE TEMPERATURE; GLOW DISCHARGE; LIGHT INDUCED DEFECTS; LIGHT INTENSITY EXPOSURE; PHOTOCARRIER GENERATION RATE;

AMORPHOUS SILICON;

EID: 0030563486     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00716-4     Document Type: Article

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