Light-induced annealing of dangling bonds in He-diluted glow discharge a-Si:H films

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 311-315

  Takeda, K ^a   Hikita, H ^b   Kondo, A ^c   Ganjoo, A ^c   Shimakawa, K ^c   Morigaki, K ^d  

^a Electro Chemical and Cancer Institute   (Japan)

^b MEIKAI UNIVERSITY SCHOOL OF DENTISTRY   (Japan)

^c GIFU UNIVERSITY   (Japan)

^d HIROSHIMA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Dangling bond; Electron spin resonance (ESR); He diluted glow discharge a Si:H film; Illumination; Light induced annealing

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; DENSITY (OPTICAL); ELECTRON SPIN RESONANCE SPECTROSCOPY; GLOW DISCHARGES; SEMICONDUCTING SILICON;

DANGLING BONDS;

SEMICONDUCTING FILMS;

EID: 0032067502     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00271-3     Document Type: Article

References (4)

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4. K. Morigaki, F. Yonezawa, J. Non-Cryst. Solids 164-166 (1993) 215.