Light-induced metastable defects in a-Si:H studied by constant photocurrent method at 120 K

Journal of Non-Crystalline Solids

Volumn 255, Issue 2, 1999, Pages 132-139

  Kodolbas, A O ^a   Eray, A ^a   Öktü, Ö ^a  

^a HACETTEPE UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ANALYSIS; ANNEALING; DEFECTS; HYDROGENATION; LIGHT ABSORPTION; LOW TEMPERATURE OPERATIONS; PHOTOCURRENTS; QUENCHING;

CONSTANT PHOTOCURRENT METHOD; LIGHT-INDUCED METASTABLE DEFECTS;

AMORPHOUS SILICON;

EID: 0032681515     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(99)00384-1     Document Type: Article

References (16)

1. Zhang Q., Takashima H., Zhou J.H., Kumeda M., Shimuzu T. Phys. Rev. B. 50:1994;1551.
2. Fritzsche H. Mater. Res. Soc. Symp. Proc. 467:1997;19.
3. Stutzmann M. Mater. Res. Soc. Symp. Proc. 467:1997;37.
4. Shimizu T., Durnyd R., Kumeda M. Mater. Res. Soc. Symp. Proc. 420:1996;553.
5. Stradins P., Fritzsche H. Philos. Mag. B. 69:1994;121.
6. Stradins P., Tran M.Q., Fritzsche H. J. Non-Cryst. Solids. 164-166:1993;175.
7. Stradins P., Fritzsche H., Tran M. Mater. Res. Soc. Symp. Proc. 377:1995;467.
8. Zhang Q., Takashima H., Kumeda M., Shimuzu T. J. Non-Cryst. Solids. 198-200:1996;495.
9. G.D. Cody, Semiconductors and Semimetals, vol. 21B, Academic Press, Orlando, FL, 1984, p. 11.
10. R.A. Street, Hydrogenated Amorphous Silicon, Cambridge University, Cambridge, 1991, p. 92.
11. Wyrsch N., Finger F., McMahon T.J., Vanecek M. J. Non-Cryst. Solids. 137-138:1991;347.
12. J. Kocka, M. Vanecek, A. Triska, in: H. Fritzsche (Ed.), Amorphous Silicon and Related Materials, 1988, p. 297.
13. Smith Z.E., Chu V., Shepard K., Aljishi S., Slobodin D., Kolodzey J., Wagner S., Chu T.L. Appl. Phys. Lett. 50:1987;1521.
14. Stutzmann M., Jackson W.B., Tsai C.C. Phys. Rev. B. 32:1985;23.
15. Hata N., Wagner S. J. App. Phys. 72:1992;2857.
16. A.O. Kodolbas, A. Eray, Ö. Öktü, G. Nobile, Presented in the 10th International School on Condensed Matter Physics, Thin Film Materials and Devices, 1-4 September 1998, Varna.