Effect of implantation oxide on the Ti- and Co-silicidation of narrow diffusion and poly-lines

Thin Solid Films

Volumn 320, Issue 1, 1998, Pages 122-127

  Lauwers, A ^a   Naem, A ^b   De Potter, M ^a   Maex, K ^a  

^a IMEC   (Belgium)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

Co silicidation; Implantation oxide; Knock on; Narrow lines; Sheet resistance; Ti silicidation

Indexed keywords

ARSENIC; BORON COMPOUNDS; DIFFUSION; OXIDES; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

IMPLANTATION OXIDE; KNOCK ON; NARROW LINES; SHEET RESISTANCE; SILICIDATION;

ION IMPLANTATION;

EID: 0032482028     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(97)01070-5     Document Type: Article

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