Electrical properties of buried oxide-silicon interface

Journal of Applied Physics

Volumn 80, Issue 3, 1996, Pages 1605-1610

  Dimitrakis, P ^a   Papaioannou, G J ^a   Cristoloveanu, S ^b  

^a UNIVERSITY OF ATHENS   (Greece)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008537066     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362958     Document Type: Article

References (34)

1. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices (Kluwer, Boston, 1995).
2. S. Nakashima and K. Izumi, J. Mater Res. 8, 523 (1993).
3. S. Nakashima et al., in Proceedings of the Fifth International Symposium on SOI Technology and Devices (Electrochemical Society, New York, 1992), Vol. 2-13, p. 358.
4. Y. Li, J. A. Kilner, R. J. Chater, P. L. F. Hemment, A. Nejim, K. Robinson, K. J. Reeson, C. D. Marsh, and G. R. Booker, J. Electrochem. Soc. 140, 1780 (1993).
5. Y. Omura, S. Nakashima, K. Izumi, and T. Ishii, IEEE Trans. Electron Devices 40, 1019 (1993).
6. B. Aspar, C. Pudda, A. M. Papon, A. J. Auberton-Herve, and J. M. Lamure, in Proceedings of the Sixth International Symposium on Silicon-On-Insulator Technology and Devices (Electrochemical Society, New York, 1994), Vol. 94-11, p. 62.
7. T. Tsuchiya, T. Ohno, and Y. Kado, in Proceedings of Sixth International Symposium on Silicon-On-Insulator Technology and Devices (Electrochemical Society, New York, 1994), Vol. 94-11, p. 401.
8. J. Stoemenos, Microelectron. Eng. 22, 307 (1993).
9. 2 Interface 2, edited by C. R. Helms and B. E. Deal (Plenum New York, 1993), p. 309.
10. D. E. Jooannou, S. Cristoloveanu, M. Mukherjee, and B. Mazhari, IEEE Trans. Electron Devices Lett. 11, 409 (1990).
11. D. E. Joannou, S. Cristoloveanu, C. N. Potamianos, X. Zhong, P. K. McLarty, and H. L Hughes, IEEE Trans. Electron Devices 38, 463 (1991).
12. H. S. Chen and S. S. Li, IEEE Trans. Electron Devices 39, 1740 (1992).
13. H. S. Chen and S. S. Li, IEEE Trans. Electron Devices 39, 1747 (1992).
14. K. Yamasaki et al., Jpn. J. Appl. Phys. 18, 113 (1979).
15. K. V. Ravi, Imperfections and Impurities in Semiconductor Silicon (Wiley-Interscience, New York, 1981), p. 287.
16. K. Vanheusden and A. Stesmans, Appl. Phys. Lett. 62, 2405 (1993).
17. E. H. Nicollian and J. R. Brews, MOS Physics and Technology (Wiley-Interscience, New York, 1982).
18. N. O. Pearce, B. Hamilton, A. R. Peaker, and R. A. Craven, J. Appl. Phys. 62, 576 (1987).
19. D. Vuillaume, M. Lanoo, J. C. Bourgoin, and E. Rosencher, J. Appl. Phys. 66, 5920 (1989).
20. M. Lanoo and J. Bourgoin, Point Defects in Semiconductors II: Experimental Aspects (Springer, Berlin, 1981).
21. K. L. Wang and A. O. Evwaraye, J. Appl. Phys. 47, 4574 (1976).
22. C. R. Helms and E. H. Poindexter, Rep. Prog. Phys. 57, 791 (1994).
23. E. H. Poindexter, in Semiconductor Interfaces, Microstructure and Devices: Properties and Applications, edited by Zhe Chuan Feng (IOP, Bristol, 1993), p. 279.
24. R. C. Barklie, A. Hobbs, P. L. F. Hemment and K. Reeson, J. Phys. C 19, 6417 (1986).
25. W. E. Carlos, Appl. Phys. Lett. 50, 1450 (1987).
26. J. Muller and B. Schiek, Solid-State Electron. 13, 1319 (1970).
27. D. K. Schroder, J. D. Whitfield, and C. J. Varker, IEEE Trans. Electron. Devices ED-31, 462 (1984).
28. H.-S. Chen and S. S. Li, Solid-State Electron. 35, 371 (1992).
29. W. C. Johnson and P. T. Panousis, IEEE Trans. Electron Devices ED-18, 965 (1971).
30. J. R. Brews, J. Appl. Phys. 45, 76 (1974).
31. H. J. Kump and J. B. Bernstein, IEEE Circ. Dev. Mag. 1, 17 (1985).
32. D. Vuillaume, A. Mir, and D. Goguenheim, in Proceedings of the 16th International Conference on Defects in Semiconductors, Part 3 [Mater. Sci. Forum, 83-87, 1427 (1992)].
33. S. I. Fedoseenko, V. K. Adamchuk, and V. V. Afanas'ev, Microelectron. Eng. 22, 367 (1993).
34. J. Stoimenos (private communication).