Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator analytical model, simulation, and measurements

Electrochemical and Solid-State Letters

Volumn 2, Issue 5, 1999, Pages 242-243

  Munteanu, D ^a   Cristoloveanu, S ^a   Hovel, H ^b  

^a Grenoble INP Phelma   (France)

^b IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; GEOMETRY; MATHEMATICAL MODELS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSCONDUCTANCE;

ELECTRICAL CHARACTERIZATION; SIMOX WAFER;

MOSFET DEVICES;

EID: 0032666147     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390798     Document Type: Article

References (4)

1. S. Cristoloveanu and S. Williams, IEEE Electron Dev. Lett., 13, 102, (1992).
2. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices, p. 104, Kluwer Academic Publisher, Norwell, MA (1995).
3. H.J. Hovel, in Proceedings of 1997 IEEE International SOI Conference, p. 180, IEEE, Piscataway, NJ (1997).
4. Atlas User's Manual (1996).