Effect of Be++O+ coimplantation on Be acceptors in GaN

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2082-2084

  Nakano, Yoshitaka ^a   Kachi, Tetsu ^a   Jimbo, Takashi ^b  

^a Rd Management Section   (Japan)

^b NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; ATMOSPHERIC PRESSURE; BERYLLIUM; CARRIER CONCENTRATION; EPITAXIAL GROWTH; HALL EFFECT; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ANALYSIS;

THERMAL ADMITTANCE SPECTROSCOPY (TAS);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037475076     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564641     Document Type: Article

References (12)

1. F. Bernardini, V. Fiorentini, and A. Bosin, Appl. Phys. Lett. 70, 2990 (1997).
2. J. Neugebauer and C. G. Van de Walle, J. Appl. Phys. 85, 3003 (1999).
3. Y. Nakano and T. Jimbo, Appl. Phys. Lett. 81, 3990 (2002).
4. H. Kobayashi and W. H. Gibson, Appl. Phys. Lett. 74, 2355 (1999).
5. Y. Nakano and T. Kachi, Appl. Phys. Lett. 79, 1468 (2001).
6. Y. Nakano and T. Jimbo, J. Appl. Phys. 92, 3815 (2002).
7. Y. Nakano, R. K. Malhan, T. Kachi, and H. Tadano, J. Appl. Phys. 89, 5961 (2001).
8. D. G. Kent, M. E. Overberg, and S. J. Pearton, J. Appl. Phys. 90, 3750 (2002).
9. Y. Nakano and T. Kachi, Appl. Phys. Lett. 79, 1631 (2001).
10. Y. Nakano and T. Jimbo, J. Appl. Phys. 92, 5590 (2002).
11. J. W. Huang, T. F. Kuech, H. Lu, and I. Bhat, Appl. Phys. Lett. 68, 2392 (1996).
12. D. Seghier and H. P. Gislason, Appl. Phys. Lett. 88, 6483 (2000).