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Volumn 389-393, Issue 1, 2002, Pages 307-310
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SiO2 as oxygen source for the chemical vapor transport of SiC
a
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Author keywords
Chemical vapor transport; Epitaxy; SiO2; Thermodynamic simulation
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
EPITAXIAL LAYERS;
OXYGEN;
SILICON CARBIDE;
SUBLIMATION;
THERMODYNAMIC PROPERTIES;
EPITAXIAL GROWTH;
SILICA;
SILICON OXIDES;
TRANSPORT PROPERTIES;
CHEMICAL VAPOR TRANSPORT;
THERMODYNAMIC SIMULATION;
GASEOUS SPECIES;
OXYGEN SOURCES;
SIC POWDER;
SILICA POWDER;
SIO2;
THERMODYNAMIC SIMULATIONS;
TRANSPORTING AGENTS;
MATERIALS SCIENCE;
SILICON CARBIDE;
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EID: 4243914762
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: None Document Type: Article |
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Times cited : (2)
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References (7)
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