Stress related morphological defects in SiC epitaxial layers

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1246-1250

  Yakimova, R ^a   Syvajarvi M ^a   Kakanakova Georgieva, A ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

4H SiC; Morphological defect; Stress; Thick layers

Indexed keywords

CARBON; EPITAXIAL GROWTH; MORPHOLOGY; SILICON; STRESSES;

SUBLIMATION EPITAXY;

THICK FILMS;

SILICON CARBIDE;

EID: 0035270173     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00385-X     Document Type: Article

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