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Volumn 234, Issue 1, 2002, Pages 63-69
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Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE
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Author keywords
A1. Vapour liquid solid mechanism; A3. Liquid phase epitaxy; A3. Vapor phase epitaxy; B1. Silicon carbide
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
LIQUID PHASE EPITAXY;
SEMICONDUCTOR MATERIALS;
SILICON CARBIDE;
SUBSTRATES;
VAPOR PHASE EPITAXY;
HOMOEPITAXIAL GROWTH;
VAPOUR-LIQUID-SOLID (VLS) MECHANISM;
CRYSTAL GROWTH;
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EID: 0036131777
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(01)01651-7 Document Type: Article |
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Times cited : (16)
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References (19)
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