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Volumn 234, Issue 1, 2002, Pages 63-69

Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE

Author keywords

A1. Vapour liquid solid mechanism; A3. Liquid phase epitaxy; A3. Vapor phase epitaxy; B1. Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LIQUID PHASE EPITAXY; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SUBSTRATES; VAPOR PHASE EPITAXY;

EID: 0036131777     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01651-7     Document Type: Article
Times cited : (16)

References (19)
  • 1
    • 0006610546 scopus 로고    scopus 로고
    • Thesis, Linköping University, Linköping
    • (1999)
    • Ellison, A.1
  • 14
    • 0006571985 scopus 로고    scopus 로고
    • Thesis, Université Montpellier II, Montpellier
    • (2000)
    • Neyret, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.