Excitonic luminescence from nonsymmetric heterovalent AlAs/GaAs/ZnSe quantum wells

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1854-1856

  Kudelski, A ^a,c   Bindley, U ^a   Furdyna, J K ^a   Dobrowolska, M ^a   Wojtowicz, T ^a,b  

^a UNIVERSITY OF NOTRE DAME   (United States)

^b INSTITUTE OF PHYSICS   (Poland)

^c UNIVERSITY OF WARSAW   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRON TUNNELING; ENERGY GAP; EXCITONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE;

QUANTUM CONFINEMENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037464252     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563055     Document Type: Article

References (21)

1. R. Fiederling, M. Keim, G. Reuscher, W. Ossau, G. Schmidt, A. Waag, and L. W. Molenkamp, Nature (London) 402, 787 (1999).
2. E. L. Ivchenko, A. Kaminski, and U. Rössler, Phys. Rev. B 54, 5852 (1996).
3. T. W. Kim, M. Jung, D. U. Lee, E. Oh, S. D. Lee, H. D. Jung, M. D. Kim, J. R. Kim, H. S. Park, and J. Y. Lee, Thin Solid Films 298, 187 (1997).
4. S. Rubini, E. Milocco, L. Sorba, and A. Franciosi, J. Cryst. Growth 184/185, 178 (1998).
5. R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni, R. Resta, A. Baldereschi, J. E. Angelo, and W. W. Gerberich, Phys. Rev. Lett. 72, 294 (1994).
6. A. Ohtake, S. Miwa, L.-H. Kuo, T. Yasuda, K. Kimura, C. Jin, and T. Yao, J. Cryst. Growth 184/185, 163 (1998).
7. L. H. Kuo, K. Kimura, T. Yasuda, S. Miwa, C.-G. Jin, and K. Tanaka, Appl. Phys. Lett. 68, 2413 (1996).
8. Y. Zhang, B. J. Skromme, S. M. Shibli, and M. C. Tamargo, Phys. Rev. B 48, 10885 (1993).
9. M. Funato, S. Fujita, and S. Fujita, Phys. Rev. B 60, 16652 (1999).
10. J. Haetty, G. Kioseoglou, A. Petrou, M. Dutta, J. Pamulapati, and M. Taysing-Lara, Phys. Rev. B 59, 7546 (1999).
11. M. Holtz, R. Cingolani, K. Reimann, R. Muralidharan, K. Syassen, and K. Ploog, Phys. Rev. B 41, 3641 (1990).
12. W. Liu, D. Jiang, K. Luo, Y. Zhang, and X. Yang, Appl. Phys. Lett. 67, 679 (1995).
13. M. Ilegems, R. Dingle, and L. W. Rupp, J. Appl. Phys. 46, 3059 (1975).
14. D. DeSimone, C. E. C. Wood, and C. A. Evans, J. Appl. Phys. 53, 4938 (1982).
15. F. Bantien and J. Weber, Solid State Commun. 61, 423 (1987).
16. Y.-H. Zhang and K. Ploog, Phys. Rev. B 60, 16652 (1999).
17. Values of the effective electron mass at the Γ point and of the direct energy gap for ZnSe were taken from P. J. Dean, D. C. Herbert, C. J. Werkhoven, B. J. Fitzpatrick, and R. N. Bhargava, Phys. Rev. B 23, 4888 (1981).
18. z points for AlAs and GaAs were taken from C. N. Yeh, L. E. McNeil, L. J. Blue, and T. Daniels-Race, J. Appl. Phys. 77, 4541 (1995).
19. The heavy-hole effective mass for GaAs was taken from R. C. Miller, D. A. Kleiman, and A. C. Gossard, Phys. Rev. B 29, 7085 (1984).
20. The heavy-hole effective mass for ZnSe was taken from P. Lawaetz, Phys. Rev. B 4, 3460 (1971).
21. The heavy-hole effective mass for AlAs was taken from M. P. C. M. Krijn, Semicond. Sci. Technol. 6, 27 (1991).